A Ka-Band Mutual Coupling Resilient Stacked-FET Power Amplifier With 21.2 dBm OP1dB and 27.6% PAE1dB in 45-nm CMOS SOI
In: IEEE Solid-State Circuits Letters, Jg. 7 (2024), S. 147-150
Online
academicJournal
Zugriff:
Titel: |
A Ka-Band Mutual Coupling Resilient Stacked-FET Power Amplifier With 21.2 dBm OP1dB and 27.6% PAE1dB in 45-nm CMOS SOI
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Autor/in / Beteiligte Person: | Zhang, J. ; Wang, D. ; Zhu, W. ; Zhai, M. ; Yi, X. ; Wang, Y. |
Link: | |
Zeitschrift: | IEEE Solid-State Circuits Letters, Jg. 7 (2024), S. 147-150 |
Veröffentlichung: | 2024 |
Medientyp: | academicJournal |
ISSN: | 2573-9603 (print) |
DOI: | 10.1109/LSSC.2024.3386676 |
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