Physical Modeling of Perimeter-Gated SPADs in Standard Deep Submicron CMOS Processes
In: IEEE 17th Dallas Circuits and Systems Conference (DCAS); (2024-04-19) S. 1-5
Konferenz
Zugriff:
Titel: |
Physical Modeling of Perimeter-Gated SPADs in Standard Deep Submicron CMOS Processes
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Autor/in / Beteiligte Person: | Hasan, Sajid ; Shawkat, Shamim Ara |
Quelle: | IEEE 17th Dallas Circuits and Systems Conference (DCAS); (2024-04-19) S. 1-5 |
Veröffentlichung: | 2024 |
Medientyp: | Konferenz |
ISBN: | 979-8-3503-4953-5 (print) |
ISSN: | 2766-5186 (print) |
DOI: | 10.1109/DCAS61159.2024.10539869 |
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