Study on Enhancing ESD Reliability Through A Area Modulation of High-Voltage nLDMOSs with the Drain Embedded STI
In: 10th International Conference on Applied System Innovation (ICASI); (2024-04-17) S. 46-48
Konferenz
Zugriff:
Titel: |
Study on Enhancing ESD Reliability Through A Area Modulation of High-Voltage nLDMOSs with the Drain Embedded STI
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Autor/in / Beteiligte Person: | Lin, Ting-En ; Chen, Shen-Li ; Yang, Xiu-Yuan ; Chen, Hung-Wei ; Lee, Yi-Mu |
Quelle: | 10th International Conference on Applied System Innovation (ICASI); (2024-04-17) S. 46-48 |
Veröffentlichung: | 2024 |
Medientyp: | Konferenz |
ISBN: | 979-8-3503-9492-4 (print) |
ISSN: | 2768-4156 (print) |
DOI: | 10.1109/ICASI60819.2024.10547948 |
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