200W push-pull & 110W single-ended high performance RF-LDMOS transistors for WCDMA basestation applications
In: IEEE MTT-S International Microwave Symposium - IMS 2003; Jg. 1 (2003) S. 69-72
Konferenz
Zugriff:
Titel: |
200W push-pull & 110W single-ended high performance RF-LDMOS transistors for WCDMA basestation applications
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Autor/in / Beteiligte Person: | Dragon, C. ; Brakensiek, W. ; Burdeaux, D. ; Burger, W. ; Funk, G. ; Hurst, M. ; Rice, D. |
Quelle: | IEEE MTT-S International Microwave Symposium - IMS 2003; Jg. 1 (2003) S. 69-72 |
Veröffentlichung: | 2003 |
Medientyp: | Konferenz |
ISBN: | 0-7803-7695-1 (print) ; 978-0-7803-7695-3 (print) |
ISSN: | 0149-645X (print) |
DOI: | 10.1109/MWSYM.2003.1210885 |
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