Nitride-based MQW LEDs with multiple GaN-SiN nucleation layers
In: IEEE Transactions on Electron Devices, Jg. 52 (2005-06-01), Heft 6, S. 1104-1109
Online
academicJournal
Zugriff:
Titel: |
Nitride-based MQW LEDs with multiple GaN-SiN nucleation layers
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Autor/in / Beteiligte Person: | Wei, S.C. ; Su, Y.K. ; Chang, S.J. ; Chen, Shi-Ming ; Li, Wen-Liang |
Link: | |
Zeitschrift: | IEEE Transactions on Electron Devices, Jg. 52 (2005-06-01), Heft 6, S. 1104-1109 |
Veröffentlichung: | 2005 |
Medientyp: | academicJournal |
ISSN: | 0018-9383 (print) ; 1557-9646 (print) |
DOI: | 10.1109/TED.2005.848085 |
Sonstiges: |
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