On the Use of a SiGe Spike in the Emitter to Improve the $f_{T}\hbox{xBV}_{\rm CEO}$ Product of High-Speed SiGe HBTs
In: IEEE Electron Device Letters, Jg. 28 (2007-04-01), Heft 4, S. 270-272
Online
academicJournal
Zugriff:
Titel: |
On the Use of a SiGe Spike in the Emitter to Improve the $f_{T}\hbox{xBV}_{\rm CEO}$ Product of High-Speed SiGe HBTs
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Autor/in / Beteiligte Person: | Choi, L. J. ; Van Huylenbroeck, S. ; Piontek, A. ; Sibaja-Hernandez, A. ; Kunnen, E. ; Meunier-Beillard, P. ; van Noort, W. D. ; Hijzen, E. ; Decoutere, S. |
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Zeitschrift: | IEEE Electron Device Letters, Jg. 28 (2007-04-01), Heft 4, S. 270-272 |
Veröffentlichung: | 2007 |
Medientyp: | academicJournal |
ISSN: | 0741-3106 (print) ; 1558-0563 (print) |
DOI: | 10.1109/LED.2007.892366 |
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