Key factors to sustain the extension of a MHM-based integration scheme to medium and high porosity PECVD low-k materials
In: International Interconnect Technology Conference - IITC; (2008-06-01) S. 52
Konferenz
Zugriff:
Titel: |
Key factors to sustain the extension of a MHM-based integration scheme to medium and high porosity PECVD low-k materials
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Autor/in / Beteiligte Person: | Travaly, Y. ; van Aelst, J. ; Truffert, V. ; Verdonck, P. ; Dupont, T. ; Camerotto, E. ; Richard, O. ; Bender, H. ; Kroes, C. ; de Roest, D. ; Vereecke, G. ; Claes, M. ; Le, Q. T. ; Kesters, E. ; van Cauwenberghe, M. ; Beynet, J. ; Kaneko, S. ; Struyf, H. ; Baklanov, M. ; Matsushita, K. ; Kobayashi, N. ; Sprey, H. ; Beyer, G. |
Quelle: | International Interconnect Technology Conference - IITC; (2008-06-01) S. 52 |
Veröffentlichung: | 2008 |
Medientyp: | Konferenz |
ISBN: | 978-1-4244-1911-1 (print) ; 978-1-4244-1912-8 (print) |
ISSN: | 2380-632X (print) ; 2380-6338 (print) |
DOI: | 10.1109/IITC.2008.4546923 |
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