Wide Cell Pitch LPT(II)-CSTBT™(III) technology rating up to 6500 V for low loss
In: 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD); (2010-06-01) S. 387-390
Konferenz
Zugriff:
Titel: |
Wide Cell Pitch LPT(II)-CSTBT™(III) technology rating up to 6500 V for low loss
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Autor/in / Beteiligte Person: | Nakamura, Katsumi ; Sadamatsu, Koji ; Oya, Daisuke ; Shigeoka, Hidenori ; Hatade, Kazunari |
Quelle: | 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD); (2010-06-01) S. 387-390 |
Veröffentlichung: | 2010 |
Medientyp: | Konferenz |
ISBN: | 978-1-4244-7718-0 (print) ; 978-4-88686-069-9 (print) |
ISSN: | 1063-6854 (print) ; 1946-0201 (print) ; 1943-653X (print) |
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