Advanced multi-high-operation-voltage I/O device design for 32nm gate-first HiK MG technology
In: IEEE International Conference of Electron Devices and Solid- State Circuits (EDSSC); (2010-12-01) S. 1-4
Konferenz
Zugriff:
Titel: |
Advanced multi-high-operation-voltage I/O device design for 32nm gate-first HiK MG technology
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Autor/in / Beteiligte Person: | Wu, Xusheng ; Hu, Y. ; Kusunoki, N. ; Yang, Z. J. ; Yang, G. ; Teh, Y. ; Kirshnan, R. ; Krishnan, S. ; Shepard, J. ; Han, S. ; Lee, Y. ; Arnaud, F. ; Sherony, M. ; Sudijono, J. ; Steegen, A. |
Quelle: | IEEE International Conference of Electron Devices and Solid- State Circuits (EDSSC); (2010-12-01) S. 1-4 |
Veröffentlichung: | 2010 |
Medientyp: | Konferenz |
ISBN: | 978-1-4244-9997-7 (print) ; 978-1-4244-9996-0 (print) ; 978-1-4244-9998-4 (print) |
DOI: | 10.1109/EDSSC.2010.5713769 |
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