LDD design tradeoffs for single transistor latch-up and hot carrier degradation control in accumulation mode FD SOI MOSFET's
In: IEEE Transactions on Electron Devices, Jg. 44 (1997-06-01), Heft 6, S. 972-977
Online
academicJournal
Zugriff:
Titel: |
LDD design tradeoffs for single transistor latch-up and hot carrier degradation control in accumulation mode FD SOI MOSFET's
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Autor/in / Beteiligte Person: | Duan, F.L. ; Sinha, S.P. ; Ioannou, D.E. ; Brady, F.T. |
Link: | |
Zeitschrift: | IEEE Transactions on Electron Devices, Jg. 44 (1997-06-01), Heft 6, S. 972-977 |
Veröffentlichung: | 1997 |
Medientyp: | academicJournal |
ISSN: | 0018-9383 (print) ; 1557-9646 (print) |
DOI: | 10.1109/16.585553 |
Sonstiges: |
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