On-Current Decrease After Erasing Operation in the Nonvolatile Memory Device With LDD Structure
In: IEEE Electron Device Letters, Jg. 32 (2011-08-01), Heft 8, S. 1038-1040
Online
academicJournal
Zugriff:
Titel: |
On-Current Decrease After Erasing Operation in the Nonvolatile Memory Device With LDD Structure
|
---|---|
Autor/in / Beteiligte Person: | Chang, G. W. ; Chang, T. C. ; Syu, Y. E. ; Tai, Y. H. ; Jian, F. Y. |
Link: | |
Zeitschrift: | IEEE Electron Device Letters, Jg. 32 (2011-08-01), Heft 8, S. 1038-1040 |
Veröffentlichung: | 2011 |
Medientyp: | academicJournal |
ISSN: | 0741-3106 (print) ; 1558-0563 (print) |
DOI: | 10.1109/LED.2011.2158182 |
Sonstiges: |
|