A New Failure Mechanism And Its Improvement On Gate Oxide Reliability At Field Edge By Locos Isoiation
In: 50th Annual Device Research Conference, 1992, S. 1-1
Konferenz
Zugriff:
Titel: |
A New Failure Mechanism And Its Improvement On Gate Oxide Reliability At Field Edge By Locos Isoiation
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Autor/in / Beteiligte Person: | Takahashi, M. ; Uchida, H. ; Nagatomo, Y. ; Hirashita, N. ; lno, M. |
Zeitschrift: | 50th Annual Device Research Conference, 1992, S. 1-1 |
Quelle: | 50th Annual Device Research Conference; (1992) S. 1-1 |
Veröffentlichung: | 1992 |
Medientyp: | Konferenz |
DOI: | 10.1109/DRC.1992.671905 |
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