Fully integrated LTE-Advanced band-switchable high-gain CMOS power amplifier
In: IEEE International Conference on Electro Information Technology (EIT); (2017-05-01) S. 431-435
Konferenz
Zugriff:
Titel: |
Fully integrated LTE-Advanced band-switchable high-gain CMOS power amplifier
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Autor/in / Beteiligte Person: | Roy, Palash ; Hamidi, S. Babak ; Dawn, Debasis |
Quelle: | IEEE International Conference on Electro Information Technology (EIT); (2017-05-01) S. 431-435 |
Veröffentlichung: | 2017 |
Medientyp: | Konferenz |
ISBN: | 978-1-5090-4767-3 (print) ; 978-1-5090-4766-6 (print) |
ISSN: | 2154-0373 (print) |
DOI: | 10.1109/EIT.2017.8053400 |
Sonstiges: |
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