Characterization of fully depleted CMOS active pixel sensors on high resistivity substrates for use in a high radiation environment
In: IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop (NSS/MIC/RTSD); (2016-10-01) S. 1-4
Konferenz
Zugriff:
Titel: |
Characterization of fully depleted CMOS active pixel sensors on high resistivity substrates for use in a high radiation environment
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Autor/in / Beteiligte Person: | Hirono, Toko ; Barbero, Marlon ; Breugnon, Patrick ; Godiot, Stephanie ; Hemperek, Tomasz ; Hugging, Fabian ; Janssen, Jens ; Kruger, Hans ; Liu, Jian ; Pangaud, Patrick ; Peric, Ivan ; Pohl, David-Leon ; Rozanov, Alexandre ; Rymaszewski, Piotr ; Wermes, Norbert |
Quelle: | IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop (NSS/MIC/RTSD); (2016-10-01) S. 1-4 |
Veröffentlichung: | 2016 |
Medientyp: | Konferenz |
ISBN: | 978-1-5090-1642-6 (print) |
DOI: | 10.1109/NSSMIC.2016.8069902 |
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