Comparing RTA and Laser SPE & LPE Annealing of Ge-epi with Si, Sn & C Implantation for Well Mobility/Strain Engineering
In: 19th International Workshop on Junction Technology (IWJT); (2019-06-01) S. 1-4
Konferenz
Zugriff:
Titel: |
Comparing RTA and Laser SPE & LPE Annealing of Ge-epi with Si, Sn & C Implantation for Well Mobility/Strain Engineering
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Autor/in / Beteiligte Person: | Borland, John ; Chaung, Shang-Shuin ; Tseng, Tseung-Yuen ; Joshi, Abhijeet ; Basol, Bulent ; Lee, Yao-Jen ; Kuroi, Takashi ; Goodman, Gary ; Khapochkina, Nadya ; Buyuklimanli, Temel |
Quelle: | 19th International Workshop on Junction Technology (IWJT); (2019-06-01) S. 1-4 |
Veröffentlichung: | 2019 |
Medientyp: | Konferenz |
ISBN: | 978-4-86348-727-7 (print) |
DOI: | 10.23919/IWJT.2019.8802624 |
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