Short Term Reliability and Robustness of ultra-thin barrier, 110 nrn-gate AlN/GaN HEMTs
In: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA); (2020-07-20) S. 1-6
Konferenz
Zugriff:
Titel: |
Short Term Reliability and Robustness of ultra-thin barrier, 110 nrn-gate AlN/GaN HEMTs
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Autor/in / Beteiligte Person: | Gao, Zhan. ; Meneghini, Matteo. ; Harrouche, Kathia ; Kabouche, Riad ; Chiocchetta, Francesca ; Okada, Etienne ; Rampazzo, Fabiana. ; De Santi, Carlo. ; Medjdoub, Farid ; Meneghesso, Gaudenzio. ; Zanoni, Enrico. |
Quelle: | IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA); (2020-07-20) S. 1-6 |
Veröffentlichung: | 2020 |
Medientyp: | Konferenz |
ISBN: | 978-1-7281-6169-3 (print) |
ISSN: | 1946-1550 (print) |
DOI: | 10.1109/IPFA49335.2020.9260793 |
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