Characterization of Programmable Charge-Trap Transistors (CTTs) in Standard 28-nm CMOS for Nonvolatile Memory and Analog Arithmetic Applications
In: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Jg. 7 (2021-06-01), Heft 1, S. 10-17
Online
academicJournal
Zugriff:
Titel: |
Characterization of Programmable Charge-Trap Transistors (CTTs) in Standard 28-nm CMOS for Nonvolatile Memory and Analog Arithmetic Applications
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Autor/in / Beteiligte Person: | Du, Y. ; Du, L. ; Fan, W. ; Xiao, Y. ; Chang, M.F. |
Link: | |
Zeitschrift: | IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Jg. 7 (2021-06-01), Heft 1, S. 10-17 |
Veröffentlichung: | 2021 |
Medientyp: | academicJournal |
ISSN: | 2329-9231 (print) |
DOI: | 10.1109/JXCDC.2021.3098469 |
Sonstiges: |
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