A 2.6 e-rms Low-Random-Noise, 116.2 mW Low-Power 2-Mp Global Shutter CMOS Image Sensor with Pixel-Level ADC and In-Pixel Memory
In: Symposium on VLSI Circuits; (2021-06-13) S. 1-2
Konferenz
Zugriff:
Titel: |
A 2.6 e-rms Low-Random-Noise, 116.2 mW Low-Power 2-Mp Global Shutter CMOS Image Sensor with Pixel-Level ADC and In-Pixel Memory
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Autor/in / Beteiligte Person: | Seo, Min-Woong ; Chu, Myunglae ; Jung, Hyun-Yong ; Kim, Suksan ; Song, Jiyoun ; Lee, Junan ; Kim, Sung-Yong ; Lee, Jongyeon ; Byun, Sung-Jae ; Bae, Daehee ; Kim, Minkyung ; Lee, Gwi-Deok ; Shim, Heesung ; Um, Changyong ; Kim, Changhwa ; Baek, In-Gyu ; Kwon, Doowon ; Kim, Hongki ; Choi, Hyuksoon ; Go, Jonghyun ; Ahn, Jung ; Chak ; Lee, Jaekyu ; Moon, Changrok ; Lee, Kyupil ; Kim, Hyoung-Sub |
Quelle: | Symposium on VLSI Circuits; (2021-06-13) S. 1-2 |
Veröffentlichung: | 2021 |
Medientyp: | Konferenz |
ISBN: | 978-4-86348-780-2 (print) |
ISSN: | 2158-5636 (print) |
DOI: | 10.23919/VLSICircuits52068.2021.9492357 |
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