Sensitivity Improvement of a Fully Symmetric Vertical Hall Device Fabricated in 0.18 μm Low-Voltage CMOS Technology
In: IEEE Journal of the Electron Devices Society, Jg. 9 (2021), S. 820-826
Online
academicJournal
Zugriff:
Titel: |
Sensitivity Improvement of a Fully Symmetric Vertical Hall Device Fabricated in 0.18 μm Low-Voltage CMOS Technology
|
---|---|
Autor/in / Beteiligte Person: | Huang, H. ; Xu, Y. |
Link: | |
Zeitschrift: | IEEE Journal of the Electron Devices Society, Jg. 9 (2021), S. 820-826 |
Veröffentlichung: | 2021 |
Medientyp: | academicJournal |
ISSN: | 2168-6734 (print) |
DOI: | 10.1109/JEDS.2021.3111687 |
Sonstiges: |
|