Investigation and Modeling of the Avalanche Failure Mechanism of 1.2-kV 4H-SiC JMOS
In: IEEE Transactions on Electron Devices, Jg. 68 (2021-12-01), Heft 12, S. 6313-6320
Online
academicJournal
Zugriff:
Titel: |
Investigation and Modeling of the Avalanche Failure Mechanism of 1.2-kV 4H-SiC JMOS
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Autor/in / Beteiligte Person: | Zhang, Y. ; Ou, Y. ; Yang, X. ; Chen, H. ; Luo, M. ; Zhang, B. ; Bai, S. ; Niu, Y. |
Link: | |
Zeitschrift: | IEEE Transactions on Electron Devices, Jg. 68 (2021-12-01), Heft 12, S. 6313-6320 |
Veröffentlichung: | 2021 |
Medientyp: | academicJournal |
ISSN: | 0018-9383 (print) ; 1557-9646 (print) |
DOI: | 10.1109/TED.2021.3122929 |
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