Photoluminescence properties of SiOxCy-films deposited under argon atmosphere and Si-based organometallic precursor by O-Cat-CVD
In: 18th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE); (2021-11-10) S. 1-4
Konferenz
Zugriff:
Titel: |
Photoluminescence properties of SiOxCy-films deposited under argon atmosphere and Si-based organometallic precursor by O-Cat-CVD
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Autor/in / Beteiligte Person: | Jain, Manmohan ; Galdamez-Martinez, Andres ; Dutt, Ateet ; Matsumoto, Yasuhiro |
Quelle: | 18th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE); (2021-11-10) S. 1-4 |
Veröffentlichung: | 2021 |
Medientyp: | Konferenz |
ISBN: | 978-1-6654-0029-9 (print) |
ISSN: | 2642-3766 (print) |
DOI: | 10.1109/CCE53527.2021.9633067 |
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