300 mm Wafer-scale In-situ CVD Growth Achieving 5.1×10-10 Ω-cm2 P-Type Contact Resistivity: Record 2.5×1021 cm-3 Active Doping and Demonstration on Highly-Scaled 3D Structures
In: IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits); (2022-06-12) S. 367-368
Konferenz
Zugriff:
Titel: |
300 mm Wafer-scale In-situ CVD Growth Achieving 5.1×10-10 Ω-cm2 P-Type Contact Resistivity: Record 2.5×1021 cm-3 Active Doping and Demonstration on Highly-Scaled 3D Structures
|
---|---|
Autor/in / Beteiligte Person: | Xu, Haiwen ; Khazaka, Rami ; Zhang, Jishen ; Zheng, Zijie ; Chen, Yue ; Gong, Xiao |
Quelle: | IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits); (2022-06-12) S. 367-368 |
Veröffentlichung: | 2022 |
Medientyp: | Konferenz |
ISBN: | 978-1-6654-9772-5 (print) |
ISSN: | 2158-9682 (print) |
DOI: | 10.1109/VLSITechnologyandCir46769.2022.9830220 |
Sonstiges: |
|