The Device Instability of p-GaN Gate HEMTs Induced by Self-Heating Effect Investigated by on-State Drain Current Injection (DCI) Technique
In: IEEE Transactions on Electron Devices, Jg. 69 (2022-10-01), Heft 10, S. 5496-5502
Online
academicJournal
Zugriff:
Titel: |
The Device Instability of p-GaN Gate HEMTs Induced by Self-Heating Effect Investigated by on-State Drain Current Injection (DCI) Technique
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Autor/in / Beteiligte Person: | Chen, J. ; Su, Y. ; Pan, C. ; Kuang, W. ; Yang, K. ; Wang, H. ; Wang, M. ; Zhang, B. ; Zhou, Q. |
Link: | |
Zeitschrift: | IEEE Transactions on Electron Devices, Jg. 69 (2022-10-01), Heft 10, S. 5496-5502 |
Veröffentlichung: | 2022 |
Medientyp: | academicJournal |
ISSN: | 0018-9383 (print) ; 1557-9646 (print) |
DOI: | 10.1109/TED.2022.3200301 |
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