Simulation of transient radiation upset in a 0.18-μm CMOS SRAM by accurately modeling a 6T memory cell
In: Microelectronics Reliability, Jg. 139 (2022-12-01)
academicJournal
Zugriff:
Titel: |
Simulation of transient radiation upset in a 0.18-μm CMOS SRAM by accurately modeling a 6T memory cell
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Autor/in / Beteiligte Person: | Zhao, Zhenguo ; Li, Guangrong ; Meng, Xuesong ; Yang, Fang ; Zeng, Xuan |
Link: | |
Zeitschrift: | Microelectronics Reliability, Jg. 139 (2022-12-01) |
Veröffentlichung: | 2022 |
Medientyp: | academicJournal |
ISSN: | 0026-2714 (electronic) |
DOI: | 10.1016/j.microrel.2022.114787 |
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