Impact of graded channel (GC) design in fully depleted cylindrical/surrounding gate MOSFET (FD CGT/SGT) for improved short channel immunity and hot carrier reliability
In: Solid State Electronics, Jg. 51 (2007), Heft 3, S. 398-404
academicJournal
Zugriff:
Titel: |
Impact of graded channel (GC) design in fully depleted cylindrical/surrounding gate MOSFET (FD CGT/SGT) for improved short channel immunity and hot carrier reliability
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Autor/in / Beteiligte Person: | Kaur, Harsupreet ; Kabra, Sneha ; Bindra, Simrata ; Haldar, Subhasis ; Gupta, R.S. |
Link: | |
Zeitschrift: | Solid State Electronics, Jg. 51 (2007), Heft 3, S. 398-404 |
Veröffentlichung: | 2007 |
Medientyp: | academicJournal |
ISSN: | 0038-1101 (electronic) |
DOI: | 10.1016/j.sse.2007.01.025 |
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