Arsenic-doped Ge-spiked monoemitter SiGe:C heterojunction bipolar transistors by low-temperature trisilane based chemical vapor deposition
In: Thin Solid Films, Jg. 520 (2012-02-01), Heft 8, S. 3345-3348
academicJournal
Zugriff:
Titel: |
Arsenic-doped Ge-spiked monoemitter SiGe:C heterojunction bipolar transistors by low-temperature trisilane based chemical vapor deposition
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Autor/in / Beteiligte Person: | You, Shuzhen ; Decoutere, Stefaan ; Nguyen, Ngoc Duy ; Van Huylenbroeck, Stefaan ; Sibaja-Hernandez, Arturo ; Venegas, Rafael ; Loo, Roger ; De Meyer, Kristin |
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Zeitschrift: | Thin Solid Films, Jg. 520 (2012-02-01), Heft 8, S. 3345-3348 |
Veröffentlichung: | 2012 |
Medientyp: | academicJournal |
ISSN: | 0040-6090 (electronic) |
DOI: | 10.1016/j.tsf.2011.10.079 |
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