Characteristics of nitrogen-incorporated silicon oxycarbide films and plasmas for plasma enhanced chemical vapor deposition with TMOS/N 2/NH 3
In: Current Applied Physics, Jg. 10 (2010), Heft 2, S. 428-435
academicJournal
Zugriff:
Titel: |
Characteristics of nitrogen-incorporated silicon oxycarbide films and plasmas for plasma enhanced chemical vapor deposition with TMOS/N 2/NH 3
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Autor/in / Beteiligte Person: | Chung, C.J. ; Chung, T.H. ; Shin, Y.M. ; Kim, Y. |
Zeitschrift: | Current Applied Physics, Jg. 10 (2010), Heft 2, S. 428-435 |
Veröffentlichung: | 2010 |
Medientyp: | academicJournal |
ISSN: | 1567-1739 (electronic) |
DOI: | 10.1016/j.cap.2009.06.056 |
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