고성능 CMOS TFT 구현을 위한 P형 SnO 소재 양극성 원인 규명 : Investigation of Origin of Ambipolar Behavior in p-Type SnO Thin-Film for High-Performance CMOS Thin-Film Transistor
In: 한국정보통신설비학회 학술대회, 2021-08-25, S. 141-143
academicJournal
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Titel: |
고성능 CMOS TFT 구현을 위한 P형 SnO 소재 양극성 원인 규명 : Investigation of Origin of Ambipolar Behavior in p-Type SnO Thin-Film for High-Performance CMOS Thin-Film Transistor
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Autor/in / Beteiligte Person: | 김태규 ; 최철희 ; 정재경 ; Kim, Tai-Kyu ; Choi, Cheol-Hee ; Jeong, Jae-Kyeong |
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Zeitschrift: | 한국정보통신설비학회 학술대회, 2021-08-25, S. 141-143 |
Veröffentlichung: | 2021 |
Medientyp: | academicJournal |
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