A Novel DTSCR Structure with High Holding Voltage and Enhanced Current Discharge Capability for 28 nm CMOS Technology ESD Protection
In: Micromachines, Jg. 15 (2023-12-01), Heft 1
Online
academicJournal
Zugriff:
Titel: |
A Novel DTSCR Structure with High Holding Voltage and Enhanced Current Discharge Capability for 28 nm CMOS Technology ESD Protection
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Autor/in / Beteiligte Person: | Han, Zeen ; Chen, Shupeng ; Liu, Hongxia ; Wang, Shulong ; Ma, Boyang ; Chen, Ruibo ; Fu, Xiaojun |
Link: | |
Zeitschrift: | Micromachines, Jg. 15 (2023-12-01), Heft 1 |
Veröffentlichung: | 2023 |
Medientyp: | academicJournal |
ISSN: | 2072-666X (print) |
DOI: | 10.3390/mi15010096 |
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