Low-ripple and dual-phase charge pump circuit regulated by switched-capacitor-based bandgap reference
In: IEEE Transactions on Power Electronics, Jg. 24 (2009-05-01), Heft 5-6, S. 1161-1172
Online
academicJournal
Zugriff:
This paper proposes a low-ripple and dual-phase charge pump circuit regulated by switched-capacitor-based bandgap reference. Due to design of a buffer stage, a system can have better bandwidth and phase margin, and thus, the transient response and driving capability can be improved. Besides, the dual-phase control can reduce the output voltage ripple by means of only one closed-loop regulation in order to improve the power conversion efficiency. Besides, the proposed automatic body switching (ABS) circuit can efficiently drive the bulk of the power p-type MOSFETs to avoid leakage and potential latch-up. Usually, the regulated charge pump circuit needs a bandgap reference circuit to provide a temperature-independent reference voltage. The switched-capacitor-based bandgap reference circuit is utilized to regulate the output voltage. This chip was fabricated by Taiwan Semiconductor Manufacturing Company (TSMC) 0.35 [micro]m 3.3 V/5 V 2P4M CMOS technology. The input voltage range varies from 2.9 to 5.5 V, and the output voltage is regulated at 5 V. Experimental results demonstrate that the charge pump can provide 48 mA maximum load current without any oscillation problems. Index Terms--Bandgap reference, charge pump, dual-phase power stage, fast transient response, output ripple, system-on-chip (SoC).
Titel: |
Low-ripple and dual-phase charge pump circuit regulated by switched-capacitor-based bandgap reference
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Autor/in / Beteiligte Person: | Huang, Ming-Hsin ; Fan, Po-Chin ; Chen, Ke-Horng |
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Zeitschrift: | IEEE Transactions on Power Electronics, Jg. 24 (2009-05-01), Heft 5-6, S. 1161-1172 |
Veröffentlichung: | 2009 |
Medientyp: | academicJournal |
ISSN: | 0885-8993 (print) |
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