Superior endurance performance of nonvolatile memory devices based on discrete storage in surface-nitrided Si nanocrystals
In: Journal of Applied Physics, Jg. 119 (2016-01-28), Heft 4
Online
academicJournal
Zugriff:
The surface-nitrided silicon nanocrystals (Si-NCs) floating gate nonvolatile memory (NVM) devices are fabricated by 0.13??m node CMOS technology. The storage carriers are fully discrete in the Si-NCs, which are different from that in the conventional poly-crystal Si or SONOS floating gate NVM devices. The fabrication of surface-nitrided Si-NCs floating gate NVM is compatible with the standard CMOS technology, which may be used in the 3-D NAND technology to further improve the device performance.
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Superior endurance performance of nonvolatile memory devices based on discrete storage in surface-nitrided Si nanocrystals
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Autor/in / Beteiligte Person: | Yu, Jie ; Chen, Kunji ; Ma, Zhongyuan ; Zhang, Xinxin ; Jiang, Xiaofan ; Huang, Xinfan ; Zhang, Yongxing ; Wang, Lingling |
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Zeitschrift: | Journal of Applied Physics, Jg. 119 (2016-01-28), Heft 4 |
Veröffentlichung: | 2016 |
Medientyp: | academicJournal |
ISSN: | 0021-8979 (print) |
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