CMOS compatible electrode materials selection in oxide-based memory devices
In: Journal of Applied Physics, Jg. 120 (2016-07-14), Heft 2
Online
academicJournal
Zugriff:
Energy Dispersed X-ray (EDX) Spectrometer analysis clearly shows that the different top electrode materials scavenge oxygen ions from the Ta 2O5 memory layer at various degrees, leading to different oxygen vacancy concentrations within the Ta 2O5. Replacing the Pt bottom electrode material with CMOS compatible materials (Ru and Ir) further reduces the power consumption and can be attributed to the modification of the Schottky barrier height and oxygen vacancy concentration at the electrode/oxide interface.This experimental-theoretical approach strongly suggests that the proper selection of CMOS compatible electrode materials will create the critical oxygen vacancy concentration to attain low power memory performance.
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CMOS compatible electrode materials selection in oxide-based memory devices
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Autor/in / Beteiligte Person: | V. Y.-Q. Zhuo ; Li, M. ; Guo, Y. ; Wang, W. ; Yang, Y. ; Jiang, Y. ; Robertson, J. |
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Zeitschrift: | Journal of Applied Physics, Jg. 120 (2016-07-14), Heft 2 |
Veröffentlichung: | 2016 |
Medientyp: | academicJournal |
ISSN: | 0021-8979 (print) |
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