International Business Machines Corporation Files Patent Application for Structure and Method of Making Strained Semiconductor CMOS Transistors Having Lattice-Mismatches Source and Drain Regions.
In: Indian Patent News, 2011-03-01
serialPeriodical
Zugriff:
Titel: |
International Business Machines Corporation Files Patent Application for Structure and Method of Making Strained Semiconductor CMOS Transistors Having Lattice-Mismatches Source and Drain Regions.
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Zeitschrift: | Indian Patent News, 2011-03-01 |
Veröffentlichung: | 2011 |
Medientyp: | serialPeriodical |
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