Brainware University Files Patent Application for Minimization of Leakage Currents and Reduction of Area of Mosfet Structure for Cmos Transistor Circuits in the Semiconductor Industry.
In: Indian Patent News, 2023-12-16
serialPeriodical
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Brainware University Files Patent Application for Minimization of Leakage Currents and Reduction of Area of Mosfet Structure for Cmos Transistor Circuits in the Semiconductor Industry.
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Zeitschrift: | Indian Patent News, 2023-12-16 |
Veröffentlichung: | 2023 |
Medientyp: | serialPeriodical |
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