Structures of Anodized Aluminum Oxide Extended-Gate Field-Effect Transistors on pH Sensors
In: Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP, Jg. 45 (2006-10-01), Heft 10A, S. 7999-8004
academicJournal
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Structures of Anodized Aluminum Oxide Extended-Gate Field-Effect Transistors on pH Sensors
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Autor/in / Beteiligte Person: | Lin, Jyh-Ling ; Chu, Yung-Ming ; Shih-Hua Hsaio 他 |
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Zeitschrift: | Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP, Jg. 45 (2006-10-01), Heft 10A, S. 7999-8004 |
Veröffentlichung: | 2006 |
Medientyp: | academicJournal |
ISSN: | 0021-4922 |
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