Ka-Band Stacked-FET Power Amplifier IC with Adaptively Controlled Gate Capacitor and Two-Step Adaptive Bias Circuit in 45-nm SOI CMOS
In: IEICE Transactions on Electronics, Jg. E106.C (2023-07-01), Heft 7, S. 382
academicJournal
Zugriff:
Titel: |
Ka-Band Stacked-FET Power Amplifier IC with Adaptively Controlled Gate Capacitor and Two-Step Adaptive Bias Circuit in 45-nm SOI CMOS
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Autor/in / Beteiligte Person: | Toshihiko, YOSHIMASU ; Tsuyoshi, SUGIURA |
Zeitschrift: | IEICE Transactions on Electronics, Jg. E106.C (2023-07-01), Heft 7, S. 382 |
Veröffentlichung: | 2023 |
Medientyp: | academicJournal |
ISSN: | 0916-8524 (print) ; 1745-1353 (print) |
DOI: | 10.1587/transele.2022CDP0002 |
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