An observation of proton-induced latchup
In: IEEE Transactions on Nuclear Science, Jg. 39 (1992-12-01), Heft 6, pt
Online
report
Proton-induced latchup in a CMOS microprocessor known to have a very low heavy-ion-induced latchup threshold LET was observed. The latchup cross section vs. proton energy for three different bias conditions is displayed. Average measures of latchup current within an 11-ms window following the onset of latchup are provided, as a function of bias and incident proton energy. These data can be interpreted in terms of the present understanding of SEE phenomena.
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An observation of proton-induced latchup
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Autor/in / Beteiligte Person: | Nichols, Donald K ; Coss, James R ; Watson, R. K ; Schwartz, Harvey R ; Pease, Ronald L |
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Zeitschrift: | IEEE Transactions on Nuclear Science, Jg. 39 (1992-12-01), Heft 6, pt |
Veröffentlichung: | United States: NASA Center for Aerospace Information (CASI), 1992 |
Medientyp: | report |
ISSN: | 0018-9499 (print) |
DOI: | 10.1109/23.211349 |
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