Synthesis and study of transparent p- and n-type semiconductors and luminescent materials

New transparent p- and n-type semiconductors and luminescent materials have been prepared and characterized. Synthesis, structures, optical and electrical properties of new chalcogenide fluoride p-type transparent semiconductors MCuQF (M=Ba, Sr; Q=S, Se, Te) are described. Band-gap tuning and improvement in conductivity through p-type doping are demonstrated in the family. The new Ag sulfide fluoride BaAgSF has been prepared, and its optical and electrical properties have been examined. Phase stabilization as well as optical and electrical properties of the p-type conductors BaCu₂S₂ and BaCu₂Se₂ are considered. New n-type transparent conducting films of W-doped In₂O₃ and W-doped zinc indium oxide (ZIO) have been prepared by pulsed laser deposition, and their electrical properties have been examined. Results on new transparent thin-film transistors containing SnO₂ or ZIO are also presented. Strong near-infrared luminescence of BaSnO3 is described, and the emission brightness is correlated to the crystallite size of assembled nanoparticles. Syntheses, structures, and optical properties of (La,Y)Sc₃(BO₃)₄:Eu³⁺, (Ba,Sr)Sc₂(BO₃)₄:Eu²⁺, and LuAl₃(BO₃)₄:Ln³⁺ (Ln=Eu, Tb, Ce) have been considered with emphasis on relations between structures and optical properties. Finally, the synthesis and luminescence properties of new potential X-ray phosphors Lu₂O₂S:Ln³⁺ (Ln=Eu, Tb) are summarized.

Graduation date: 2005