The Study of Si Bulk and TFT Magnetic Field Sensors
1995
Hochschulschrift
Zugriff:
83
Magnetic field sensors which exploit the galvanomagnetic ef- fect due to the Lorentz force on charge carriers have been pres- ent for many years.In this study,magnetic field sensors of two structures have been implemented and optimized in order to inve- stigate the possibility of increasing the symmetry of device se- nsitivities in three directions for 3-D magnetic- field sensors. For Hall voltage output format,the p+ well of the second struct- ure incteases the sensitivities in x-,y- and z-directions and improve the symmtry of sensitivities.For differential current output format,the p+ well can only increase the sensitivities for an in-plane magnetic-field applied. To improve the magnetic responses to magnetic field perpendicular to the, wafer surface, Co-Ni coating is used and the sensitivities for a magnetic field applied perpendicularly to the wafer surface are ten times more than that of a uncoated device.Further,a 2-drain have been implemented for TFT magnetic field sensors. Experimental results for this type of sensors indicate that there is a maximum value of sensitivity for various gate voltage.
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The Study of Si Bulk and TFT Magnetic Field Sensors
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Autor/in / Beteiligte Person: | Jeng, Jz-Jan ; 鄭志展 |
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Veröffentlichung: | 1995 |
Medientyp: | Hochschulschrift |
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