Electronic and photoelectronic property of conductive metallic LNO film
2000
Hochschulschrift
Zugriff:
88
Using RF magnetism sputtering deposited LaNiO3( LNO ) thin film on Si substrate. X-ray diffraction, Inductively couple plasma-Mass and Four-point probe measurement were used to determine the film as Text with LaNiO3 and LaNiO3-δ. We present electronic property of the contact with LNO and Al was Thermionic emission ; the barrier high was 0.15 eV ; Richardson constant was very low and lower with thickness of the contact. This result illustrates localization scaling effect. At last, the photovoltage was observed when our sample be illuminated .
Titel: |
Electronic and photoelectronic property of conductive metallic LNO film
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Autor/in / Beteiligte Person: | Chiou, Yi-Xun ; 邱義勳 |
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Veröffentlichung: | 2000 |
Medientyp: | Hochschulschrift |
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