High power and high efficiency Sub-THz Photonic-Transmitters at 850nm wavelength
2007
Hochschulschrift
Zugriff:
95
We demonstrate a novel photonic transmitter, which is composed of a low-temperature-grown GaAs (LTG-GaAs) based separated-transportrecombination photodiode (STR-PD) and a micromachined slot antenna. Under femto-second optical pulse illumination and Continuous-Wave(CW) illumination, this device radiates strong electrical pulses (4.5mW peak power) without the use of a Si-lens. It can be observed in the Fourier Transform Infrared Spectrometer (FTIR) spectrum of radiated pulses that a significant resonance, with a peak power of approximately 300W peak power, occurs at 500GHz, which corresponds to the designed resonant frequency of the slot antenna. The saturation problem related to the output THz power that occurs with the traditional LTG-GaAs based photonic-transmitters when operated under high external applied electrical fields (>50kV/cm) has been eliminated by the use of our device.
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High power and high efficiency Sub-THz Photonic-Transmitters at 850nm wavelength
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Autor/in / Beteiligte Person: | Chiu, Chih-Heng ; 邱治恒 |
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Veröffentlichung: | 2007 |
Medientyp: | Hochschulschrift |
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