Study of Drain Leakage Current Suppression Method for LTPS TFTs
2010
Hochschulschrift
Zugriff:
98
LTPS-TFTs, due to the high density defects located at the grain boundary and the in-grain as well as sharper drain junction, exhibit unique off-sate leakage current characteristics. The two-dimensional process simulator was adopted for constructing the poly-Si TFT structure, and then electric characteristics of the device were then evaluated by the 2D-device simulator. In this simulation, it was found that by introducing hot holes in the dielectric film, GIDL can be effectively suppressed. Through a series of simulations, the amount as well as the location of the position charge stored in the dielectric layer for the best suppression effect is analyzed. Based on the experimental results, the GIDL current can be significantly suppressed after band-to-band hot hole (BBHH) stress. This stress method is able to increase the on/off ratio of the LTPS-TFTs. Finally, the speed of hot hole injected and the stability of the suppression effect is investigated.
Titel: |
Study of Drain Leakage Current Suppression Method for LTPS TFTs
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Autor/in / Beteiligte Person: | Chang, Yi-Ching ; 張宜菁 |
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Veröffentlichung: | 2010 |
Medientyp: | Hochschulschrift |
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