A Study of Microcrystalline Silicon Thin Film Deposited By ECR-CVD
2011
Hochschulschrift
Zugriff:
99
Microcrystalline silicon (uc-Si) thin films have been prepared by electron cyclotron resonance chemical vapor deposition (ECR CVD) system. The uc-Si deposited by ECR with different concentration SiH4 (SiH4/SiH4+ H2), deposition pressures, microwave powers, and RF bins powers were investingated. The film thickness, crystalline fraction, crystalline orientation and grain size, and energy band gap of uc-Si films were measured and analysed by α-step, Raman Spectrometer, X-ray diffraction, and UV-visible Spectroscopy, respectively. The experimental results show that, When SiH4 concentration (SiH4/SiH4+ H2) is 3%, deposition pressure is 10 mTorr, Microwave power is 700W, and RF power is 15W we have high crystalline fraction.
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A Study of Microcrystalline Silicon Thin Film Deposited By ECR-CVD
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Autor/in / Beteiligte Person: | Lin Wun Bin ; 林文彬 |
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Veröffentlichung: | 2011 |
Medientyp: | Hochschulschrift |
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