Study on CIGS thin film fabricated of solid selenization.
2013
Hochschulschrift
Zugriff:
101
The absorber layer of CIGS thin film solar cells was investigated. First the CuGa/In layer was prepared using DC Magnetron sputtering, Se layer was prepared using vacuum deposition, and the layers were stacked as CuGa/In/Se for post-annealing selenization in three stages. The temperature maintaining time in the first stage of the 3-stage solid-state selenization influenced on the selenium crystallization rate and the concentration diffusion of selenium in solid solution, which changed the reaction path of selenides indirectly.In stage 2, CuSe reacted with InSe to form CuInSe2 in a brass structure, indicating that the film layers were mixed thoroughly in this stage. Secondary phases were reduced at this processing temperature since excessive secondary-phase CuSe leads to uneven mixing of CIGS film. Stage 3 was the development of grains and re-crystallization. SEM and XRD were introduced for result analysis with the aid of SIMS for verification. The optimized parameters of each stage were identified s 150/300/600(sec) by changing the temperature maintaining time of the solid-state selenization.
Titel: |
Study on CIGS thin film fabricated of solid selenization.
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Autor/in / Beteiligte Person: | Jhung, Min-Hao ; 鄭閔昊 |
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Veröffentlichung: | 2013 |
Medientyp: | Hochschulschrift |
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