Investigation on the characteristic of AlGaN/GaN HEMTs and Multi-band CPW-fed Monopole Antenna

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In high power device, AlGaN/GaN heterojunction structure has high current density and high breakdown voltage due to special polarization effect, Recently GaN structure can be implemented in wireless power transmission, automotive electronics, and telecommunications. In this study, Ti/Al/Ti and Ti/Al/Ni/Au ohmic contact metals were firstly prepared by E-Gun system, the effects of metals amd recess processes on the characteristic of AlGaN/GaN HEMTS were also investigated. Subsequently, microwave annealing process wa applied to further evaluate the characteristic of the HEMTs. Ti/Al/Ti or Ti/Al/Ni/Au wre deposited as the source/drain ohmic contact metal by E-Gun of vacuum equals to 6E-6. The deposited metals then annealed either by RTA at 875℃ for 30 seconds or by MWA at 500%W for 10 minutes. The antenna presents the design of a CPW-fed monolpole antenna, the antenna is incorporated with two meander lines type structures and a CPW-fed network, the CPW antenna operating frequency bands covers L-band 3, band 8 in LTE, 2.4/5GHz of WLAN and 3.4-3.6GHz in 5G (below 6 GHz spectrum).