Heteroepitaxial Growth and Annealing of DC Reactive Sputtered Titanium Zirconium Nitride on Si (100)
2019
Hochschulschrift
Zugriff:
108
Titanium Zirconium Nitride (TiZrN) with cubic NaCl structure has been widely applied because it has high melting temperature、high hardness、good biocompatibility and great wear resistance. This thesis studies the epitaxial growth of titanium zirconium nitride (TiZrN) films on Si (100) by DC reactive magnetron sputtering and the effects of microwave plasma on TiZrN. TiZrN films were deposited at near 860C using Ti0.68Zr0.32 alloy target with purity of 99.9 % at various powers, work pressures, film thicknesses and target-substrate distances by DC reactive magnetron sputtering. The first part of this thesis focuses on the influence of different process parameters on the microstate and properties of single-layer TiZrN. In addition, (TiZrN/TiN) multilayer was deposited on Si (100) substrate in order to improve film quality. In the second part, single-layer TiZrN and multilayer were annealed by microwave plasma with gas mixture of N2 and H2 to improve the epitaxial layer quality. The crystallinity, lattice parameter, elemental composition, morphology of both single-layer TiZrN and multilayer (TiZrN/TiN) were characterized by x-ray diffraction (XRD)、scanning electron microscope、atomic force microscope、X-ray photoelectron spectrometry (XPS) and transmission electron microscopy. The electrical resistivitys were measured by four-point probe and Hall effect measurement systems. For single-layer TiZrN, the XRD analysis showed that the lowest full width at half maximum (FWHM) of (200) x-ray rocking cuve (XRC) is 1.18 degree. In addition, (200) XRC FWHM of (TiZrN/TiN) multilayer was 0.99 degree. The epitaxial relationship of TiZrN on the Si (100) substrate is TiN (100) // Si (100) and TiN [011] // Si [011]. XPS analysis showed that the composition ratio of N to (Ti + Zr) was close to 1:1, and composition ratio between Ti and Zr was about 17 : 8. After annealing, the single-layer TiZrN (200) XRC FWHM decreaseed from 1.99 degree to 0.85 degree, with surface roughness (Root Mean Square roughness, rms) about 2.0 nm. For the (TiZrN/TiN) multilayer, microwave plasma annealing can reduce its (200) XRC FWHM from 0.99 degree to 0.79 degree, with the surface roughness about 12.2 nm.
Titel: |
Heteroepitaxial Growth and Annealing of DC Reactive Sputtered Titanium Zirconium Nitride on Si (100)
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Autor/in / Beteiligte Person: | Fu, Chia-Wei ; 傅家威 |
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Veröffentlichung: | 2019 |
Medientyp: | Hochschulschrift |
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