Adsorption of elemental S and Cs on si (100) 2x1 surfaces
In: ETD Collection for AUC Robert W. Woodruff Library
Hochschulschrift
Zugriff:
This study examined the adsorption of elemental S onclean Si(lOO) surfaces and Cs on s- covered Si(lOO) surfaces. The study was performed in an UHV system using LEED, AES and WF measurements. The objective was the protection of the\ surface against degradation. The s adsorption process may be enhanced by the addition of Cs. Results indicate that S adsortion forms: a hemisulfide, (~0.5 ML) with a (2xl) structure and a monosulfide, (~1 ML) with a (lxl) structure. Adsorption of Cs on clean Si(100)2xl reduces the WF to a minimum value with a subsequent increase towards the value of metallic Cs. Preadsorption of Son Si(100)2xl lowers the WF to a final plateau without the increase. The presence of S increases the binding energy and the maximum amount of Cs that can be deposited on the Si(lOO) surface. Structural models for S and Cs on Si(lOO) surfaces have been given in the text.
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Adsorption of elemental S and Cs on si (100) 2x1 surfaces
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| Autor/in / Beteiligte Person: | Papageorgopoulos, Aristomenis |
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| Zeitschrift: | ETD Collection for AUC Robert W. Woodruff Library |
| Veröffentlichung: | DigitalCommons@Robert W. Woodruff Library, Atlanta University Center. |
| Medientyp: | Hochschulschrift |
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