A loadless 6T SRAM cell for sub- & near- threshold operation implementedin 28 nm FD-SOI CMOS technology
2018
Online
academicJournal
Titel: |
A loadless 6T SRAM cell for sub- & near- threshold operation implementedin 28 nm FD-SOI CMOS technology
|
---|---|
Autor/in / Beteiligte Person: | Låte, Even ; Ytterdal, Trond ; Aunet, Snorre |
Link: | |
Veröffentlichung: | 2018 |
Medientyp: | academicJournal |
Sonstiges: |
|