Nonlithographic epitaxial Sn_xGe_(1–x) dense nanowire arrays grown on Ge(001)
2003
Online
Elektronische Ressource
We have grown 1-µm-thick Sn_xGe_(1–x)/Ge(001) epitaxial films with 0 < x < 0.085 by molecular-beam epitaxy. These films evolve during growth into a dense array of Sn_xGe_(1–x) nanowires oriented along [001], as confirmed by composition contrast observed in scanning transmission electron microscopy in planar view. The Sn-rich regions in these films dominate optical absorption at low energy; phase-separated Sn_xGe_(1–x) alloys have a lower-energy band gap than homogeneous alloys with the same average Sn composition.
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Nonlithographic epitaxial Sn_xGe_(1–x) dense nanowire arrays grown on Ge(001)
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Veröffentlichung: | 2003 |
Medientyp: | Elektronische Ressource |
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