Optimering av CdS-buffertlager för alkalibehandlade CIGS-solceller

An increase in conversion efficiency of CIGS thin film solar cells has been reached at Ångström Solar Center (ÅSC) due to an introduction of a post-deposition-treatment (PDT) with potassium fluoride (KF) on the CIGS absorber layer. The PDT will however affect the growth of the cadmium sulfide (CdS) buffer layer normally deposited on the CIGS layer. The purpose of this study has therefore been to increase the conversion efficiency of the CIGS solar cells by optimizing the process parameters when growing CdS with a chemical bath deposition process (CBD) on CIGS with KF-PDT. The purpose has also been to understand how CdS grows on CIGS with KF-PDT. CdS has been deposited with CBD on both CIGS with KF-PDT and on soda lime glass samples by varying process parameters such as time, bath temperature and concentrations. The solar cells were characterized using current-voltage measurements as well as external quantum efficiency measurements. Further methods of analysis were profilometry, x-ray fluorescence spectroscopy and scanning electron microscopy. It was found that the solar cells with the best performance were obtained at a bath temperature of 70 °C, process time of 3 min after preheating the cadmium acetate and ammonia solutions for 6 min and using the concentrations of the baseline process for CBD of CdS at ÅSC. The best cell of this sample resulted in a conversion efficiency of 19.1 % without antireflective coating.